Exciton-Population Inversion and Terahertz Gain in Resonantly Excited Semiconductors
Resonant laser excitation of semiconductors induces
a coherent interband polarization between conductionband electron and valence-band hole states. Through
interaction and scattering processes this optical polarization may be converted into incoherent populations of
unbound or bound electron-hole pairs (excitons). Even
though excitonic features of the coherent polarization arewell understood [20, 21], the study of its decay into incoherent many-body states is an area of active research.
Several recent experiments have applied terahertz
(THz) fields to directly probe the optically generated
many-body system. So far, this approach has been used
to detect and monitor conductivity [22], plasmons [23],
and bound exciton formation [24]. At the same time,
tunable terahertz (THz) sources evolve rapidly ranging
from free-electron [25] and quantum-cascade lasers [26] to
sources with difference-frequency generation [27]. Since
the semiconductor quasi-particle excitations strongly interact with THz radiation, it is an interesting question to
see if an excitonic system could actually be used to generate THz radiation, or even to provide THz amplification,
i.e. THz gain.
In order to explore the THz properties of resonantly
excited semiconductors, we study the build-up of exciton populations in different quantum states. Besides the
conversion of excitonic polarizations at the 1s or 2s resonances into incoherent s-type populations, we show that
Coulomb induced scattering can efficiently convert excitonic coherences with a strict s-type radial symmetry into
an incoherent p-type population. We show that this process may even lead to a population inversion between the
2p and 1s states, giving rise to THz probe gain.
As a model system, we analyze quantum-wire structures but we show that the main results are equally valid
for quantum-well systems. The electronic excitations are
described by Fermion operators ac(v),k and a+
c(v),k related to an electron with carrier momentum k in the conduction (valence) band. We include the carrier-carrier
Coulomb interaction as well as the couplings to light
fields and phonons [21].

FIG. 1: (a) For excitation at the 1s exciton resonance with
a 4 ps laser pulse (dot-dashed line), the temporal evolution
of the induced optical polarization |P|2 (shaded area), together
with the generated incoherent 1s (dashed line) and 2p
(solid line) exciton densities [104 cm-1] are shown. The inset
shows the pump (shaded area) and linear absorption (solid
line) spectra; E1s is the 1s-exciton energy.
(b) The polarization
to population conversion efficiency for 1s (dashed line)
and 2p excitons (solid line) is plotted as function of excitation
density n. The arrow indicates the density at which the dynamics
is shown in a). The shaded area represents the result
obtained without the phonon scattering.

FIG. 2: Same as Fig .1 but for excitation at the 2s exciton
resonance (inset). (a) Dynamics of optical polarization |P|2
(dot-dashed line) and incoherent densities of 2s (shaded area)
and 2p (solid line) excitons [104 cm-1]. (b) Conversion
efficiency for 1s (dashed line), 2p (solid line), and 2s (shaded
area) excitons as function of excitation density n.

FIG. 3: Terahertz gain spectra g(w) for different time delays
corresponding to the conditions of (a) 1s excitation as
in Fig. 1a and (b) 2s excitation as in Fig. 2a. All curves are
identically scaled but shifted with respect to another. Here,
E21 is the energy difference between the 1s and 2p exciton
states.
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